jiangsu changjiang electron ics technology co., ltd to-92 plastic-encapsulate transistors KTC3192 transistor(npn) fea ture high p ower g ain: gpe=29db(typ)(f=10.7mh z ) maximum ratings ( t a =25 unless otherwise noted ) symbol para meter value unit v cbo collector-base volt age 35 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 4 v i c collector current -continuo us 50 ma p c collector power dissipa tion 625 mw t j junction temperature 150 t stg storage temper ature -55-150 electrical characteristics (t a=25 unless otherw ise specified) parameter symbol test conditions min typ max unit collector-base br eakdown voltage v (br)cbo i c = 100 a, i e =0 35 v collector-emitter brea kdown voltage v (br)ceo i c = 1ma , i b =0 30 v emitter-base br eakdown voltage v (br)ebo i e = 100 a, i c =0 4 v collector cut-off cu rrent i cbo v cb = 35v , i e =0 0.1 a emitter cut-off current i ebo v eb = 4v , i c =0 1.0 a dc current gain h fe v ce =12 v, i c = 2ma 40 240 collector-emitter saturatio n voltage v ce(sat) i c = 10ma, i b = 1ma 0.4 v base-emitter saturatio n voltage v be(sat) i c = 10ma, i b = 1ma 1.0 v transition frequency f t v ce = 10 v, i c = 1ma 100 400 mhz collector out put capacitance c ob v cb =10 v,i e =0,f=1mh z 1.4 3.2 pf collector-base time con stant c c.rbb? v ce =10v,i c =1ma, f=30mh z 10 50 ps power gain gpe v cc =6v,i c =1ma, f=10.7mh z 27 33 db classification of h fe rank r o y ra nge 40-80 70-140 120- 240 to-92 1.emitter 2. collector 3. base www.cj-elec.com 1 c , dec ,2015
min max min ma x a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4. 300 4.700 0.169 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 symbol dimensions in millimeters dimensions in inches 1.270 typ 0.050 typ to-92 package outline dimensions to-92 suggested pad layout www.cj-elec.com , dec ,2015
to-92 7 d s h d q g 5 h h o z z z f m h o h f f r p 3 c,dec,2015
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